This work investigates the growth and functionalization of GaN nanowires on 6H-SiC substrates for their application in quantum technologies and solar fuel synthesis. The optimal growth temperatures and defect emissions, as well as the epitaxial relationship and optoelectronic properties of the heterostructures are analyzed. Facet-selective deposition of a CoPi co-catalyst is achieved with optically excited holes. GaN/InGaN nanowires with adjustable In concentration of an InGaN shell or InGaN quantum wells show the expected red-shifted luminescence.
